Electron transport properties of the transition metal dichalcogenides composite WX2-MoX2 (XS, Se, Te) nanowires under the external strain

We have investigated the electronic structure and transport properties of the transition metal dichalcogenides composite WX2-MoX2 (X S, Se, Te) nanowires under the external strain, in the method of the first-principles calculation combining the Density functional theory (DFT) and the Non-equilibrium Green's function (NEGF). First, we have designed the two terminal electron transport devices based on the stable transition metal dichalcogenides (TMDs) WX2-MoX2 (X S, Se, Te) composite nanowires for the first time. Second, the electronic structure and transport properties of the WX2-MoX2 composite nanowire have been demonstrated to be more sensitive to the external strain when compared to that of the composite WSe2/Te-2-MoSe2/Te-2 nanowires, the external compressive strain may significantly enchance the differential negative resistance (DNR) effect of the WSe2-MoSe2 composite nanowire based device, while the stretch strain should induce the interesting DNR in the WX2-MoX2 composite nanowire device. Finally, the obtained results have been physically explained from the integral area of the transmission coefficient in the bias voltage window, and may be of importance in the design of the nanoelectronic devices based on transition metal dichalcogenides composites.