Transport property of Sn-doped In0.5Ga0.5P layers grown by liquid phase epitaxy

The temperature-dependent Hall mobility and carrier concentration of Sn-doped In0.5Ga0.5P epilayers grown on (100) semi-insulating GaAs substrates by the liquid phase epitaxy technique have been investigated in the range of 77-300 K. It was found that the Sn-doped In0.5Ga0.5P epilayer was heavily compensated with the compensation ratio of similar to 0.4-0.6. It was also found that the Sn shallow donor has an ionization energy 17-12 meV with increasing carrier concentrations through Hall measurements. The model taking into account ionized impurity, alloy and space-charge scattering mechanisms is considered in order to properly portray the observed features of the electron mobility results. The theoretical prediction is in good agreement with the observed results. The electron mobility was limited by ionized scattering up to 120 K and was also limited by alloy, space-charge scattering up to 300 K. (C) 1999 Elsevier Science S.A. All rights reserved.