Selective Purcell enhancement of defect emission in ZnO thin films

被引：11
|
作者：
Lawrie, B. J. [1 ]
Mu, R. [2 ]
Haglund, R. F., Jr. [1 ]
机构：
[1] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA
[2] Fisk Univ, Dept Phys, Nashville, TN 37208 USA
来源：
OPTICS LETTERS | 2012年 / 37卷 / 09期
基金：
美国国家科学基金会;
关键词：
GREEN; PHOTOLUMINESCENCE; NANOPARTICLES; DYNAMICS; CARRIERS;
D O I：
10.1364/OL.37.001538
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A zinc interstitial defect present but unobservable in ZnO thin films annealed at 500 C in oxygen or in atmosphere was selectively detected by interaction of the film with an Ag surface-plasmon polariton. The time-dependent differential reflectivity of the ZnO near the ZnO/MgO interface exhibited a subpicosecond decay followed by a several nanosecond recovery, consistent with the Purcell-enhanced Zn interstitial luminescence seen in Ag-ZnO heterostructures. Heterostructures annealed at other temperatures showed significantly greater band-edge photoluminescence and no evidence of the Zn interstitial defect. (C) 2012 Optical Society of America
引用
收藏
页码：1538 / 1540
页数：3
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