Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors

被引：70

作者：

Hausmann, DM ^{[1
]}

de Rouffignac, P

Smith, A

Gordon, R

Monsma, D

机构：

[1] Harvard Univ, Chem Labs, Cambridge, MA 02138 USA

[2] Harvard Univ, Phys Lab, Cambridge, MA 02138 USA

来源：

THIN SOLID FILMS | 2003年 / 443卷 / 1-2期

关键词：

tantalum oxide; atomic layer deposition; precursors;

D O I：

10.1016/S0040-6090(03)00502-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer deposition of highly conformal films of tantalum oxide were studied using tantalum alkylamide precursors and water as the oxygen source. These films also exhibited a very high degree of conformality: 100% step coverage on vias with aspect ratios greater than 35. As deposited, the films were free of detectable impurities with the expected (2.5-1) oxygen to metal ratio and were smooth and amorphous. The films were completely uniform in thickness and composition over the length of the reactor used for depositions. Films were deposited at substrate temperatures from 50 to 350 degreesC from precursors that were vaporized at temperatures from 50 to 120 degreesC. As deposited, the films showed a dielectric constant of 28 and breakdown field consistently greater than 4.5 MV/cm. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：1 / 4

页数：4