Identification of the donor and acceptor states of the bond-centered hydrogen-carbon pair in Si and diluted SiGe alloys

被引：4

作者：

Stuebner, R. ^{[1
]}

Kolkovsky, Vl ^{[1
]}

Weber, J. ^{[1
]}

Abrosimov, N., V ^{[2
]}

Stanley, C. M. ^{[3
]}

Backlund, D. J. ^{[4
]}

Estreicher, S. K. ^{[5
]}

机构：

[1] Tech Univ Dresden, D-01062 Dresden, Germany

[2] Leibnitz Inst Crystal Growth, D-12489 Berlin, Germany

[3] Univ Indianapolis, RB Annis Sch Engn, Indianapolis, IN 46227 USA

[4] Texas Tech Hlth Sci Ctr, Simulat IT, Lubbock, TX 79430 USA

[5] Texas Tech Univ, Phys Dept, Lubbock, TX 79409 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2020年 / 127卷 / 04期

关键词：

ELECTRONIC-PROPERTIES; POOLE-FRENKEL; DEEP DONOR; DEFECTS; COMPLEX; SILICON; PSEUDOPOTENTIALS; ADSORPTION; POINTS;

D O I：

10.1063/1.5135757

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical and structural properties of two levels (E90 and H180) in diluted n- and p-type Si1-xGex alloys (0 <= x <= 0.070) are investigated by high-resolution Laplace deep level transient spectroscopy measurements and first-principles calculations. By exploiting the presence of Ge atoms close to a substitutional C atom, we show that E90 and H180 belong to the same C-H pair (labeled CH1BC) with H in a bond-centered configuration (C-H-BC-Si). The relative energies of the various configurations of the CH pair are calculated, and the complete vibrational spectra in the lowest-energy structures for each charge state are predicted. Published under license by AIP Publishing.

引用

页数：12