1.58 μm InGaAs quantum well laser on GaAs

被引：52
|
作者：
Tangring, I. [1 ]
Ni, H. Q.
Wu, B. P.
Wu, D. H.
Xiong, Y. H.
Huang, S. S.
Niu, Z. C.
Wang, S. M.
Lai, Z. H.
Larsson, A.
机构：
[1] Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 22期
关键词：
D O I：
10.1063/1.2803756
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 A/cm(2) was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 mu m GaAs-based lasers. (C) 2007 American Institute of Physics.
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页数：3
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