Electrical crosstalk analysis in a pinned photodiode CMOS image sensor array

被引：5
|
作者：
Khabir, Mehdi [1 ]
Alaibakhsh, Hamzeh [1 ]
Karami, Mohammad Azim [1 ]
机构：
[1] Univ Sci & Technol Iran, Sch Elect Engn, Univ St,Hengam St,Resalat Sq, Tehran 1311416846, Iran
来源：
APPLIED OPTICS | 2021年 / 60卷 / 31期
关键词：
PIXEL; MODEL; CCD;
D O I：
10.1364/AO.431366
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, a complete investigation and 2D simulation of electrical crosstalk in a setup with three neighboring pinned photodiode complementary metal-oxide-semiconductor (CMOS) image sensor pixels are performed. Electrical crosstalk characterization as a function of pixel size and epitaxial layer doping concentration is presented. The simulation results in constant epitaxial layer doping concentration show that the ratio of external quantum efficiency to electrical crosstalk is linear with respect to pixel size. In the pixel size of 3.7 mu m, the turning point in the correlation trend between external quantum efficiency and electrical crosstalk from a small pixel size to a large one occurs. In addition, the simulation results showthe optimal values of external quantum efficiency and electrical crosstalk occurs at 1 x 10(14) (cm(3)) in a constant pixel size. Moreover, the ratio of external quantum efficiency to the electrical crosstalk decreases linearly with respect to the epitaxial layer doping considering above 1 x 10(14) (cm(3)). (C) 2021 Optical Society of America
引用
收藏
页码：9640 / 9650
页数：11
相关论文
共 50 条
  • [1] SXGA pinned photodiode CMOS image sensor in 0.35μm technology
    Findlater, K
    Henderson, R
    Baxter, D
    Hurwitz, JED
    Grant, L
    Cazaux, Y
    Roy, F
    Herault, D
    Marcellier, Y
    2003 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE: DIGEST OF TECHNICAL PAPERS, 2003, 46 : 218 - +
  • [2] Characterization and analysis of electrical crosstalk in a linear array of CMOS image sensors
    Khabir, Mehdi
    Karami, Mohammad Azim
    APPLIED OPTICS, 2022, 61 (33) : 9851 - 9859
  • [3] Radiation Hardness Study on a Fully Depleted Pinned Photodiode CMOS Image Sensor
    Meng, Xiao
    Stefanov, Konstantin D.
    Holland, Michael A.
    Holland, Andrew D.
    2019 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 2019,
  • [4] Fully Depleted Pinned Photodiode CMOS Image Sensor With Reverse Substrate Bias
    Stefanov, Konstantin D.
    Clarke, Andrew S.
    Holland, Andrew D.
    IEEE ELECTRON DEVICE LETTERS, 2017, 38 (01) : 64 - 66
  • [5] 32 × 32 SOI CMOS image sensor with pinned photodiode on handle wafer
    Yong-Soo Cho
    H. Takao
    K. Sawada
    M. Ishida
    Sie-Young Choi
    Optical Review, 2007, 14 : 125 - 130
  • [6] Dynamic Capacitance Variations Due to Barrier Modulation in Pinned Photodiode of CMOS Image Sensor
    Khan, Uzma
    Sarkar, Mukul
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (12) : 5202 - 5208
  • [7] Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias
    Stefanov, Konstantin D.
    Clarke, Andrew S.
    Ivory, James
    Holland, Andrew D.
    SENSORS, 2018, 18 (01):
  • [8] Proton and Gamma Radiation Effects on a Fully Depleted Pinned Photodiode CMOS Image Sensor
    Meng, Xiao
    Stefanov, Konstantin D.
    Holland, Andrew D.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 67 (06) : 1107 - 1113
  • [9] A Review of the Pinned Photodiode for CCD and CMOS Image Sensors
    Fossum, Eric R.
    Hondongwa, Donald B.
    IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2014, 2 (03): : 33 - 43
  • [10] Analysis of Charge Transfer Potential Barrier in Pinned Photodiode of CMOS Image Sensors
    Khan, Uzma
    Sarkar, Mukul
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (06) : 2770 - 2777
12345