Electron mobility in strained nanowires probed by THz spectroscopy

被引:1
|
作者
Balaghi, L. [1 ,2 ]
Shan, S. [1 ]
Fotev, I [1 ,2 ]
Rana, R. [1 ]
Moebus, F. [1 ,2 ]
Venanzi, T. [1 ,2 ]
Hubner, R. [1 ]
Mikolajick, T. [3 ]
Schneider, H. [1 ]
Helm, M. [1 ,2 ]
Dimakis, E. [1 ]
Pashkin, A. [1 ]
机构
[1] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Dresden, Germany
[2] Tech Univ Dresden, D-01062 Dresden, Germany
[3] Namlab gGmbH, Dresden, Germany
关键词
D O I
10.1109/IRMMW-THz50927.2022.9895645
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We utilize optical pump - THz probe spectroscopy to estimate electron mobility in strained GaAs/(In,Al)As core/shell nanowires. Our results demonstrate that strain-induced reduction of the effective electron mass leads to a remarkable increase of the mobility. The data analysis indicates an important role of the inhomogeneous plasmon broadening that may affect THz spectra of dense ensembles of nanowires.
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页数:2
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