New phase formation of Gd2O3 films on GaAs(100)

被引：9
|
作者：
Kortan, AR
Hong, M
Kwo, J
Mannaerts, JP
Krajewski, JJ
Kopylov, N
Steiner, C
Bolliger, B
Erbudak, M
机构：
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
[2] Agere Syst Inc, Murray Hill, NJ 07974 USA
[3] Swiss Fed Inst Technol, Festkorperphys Lab, CH-8093 Zurich, Switzerland
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 04期
关键词：
D O I：
10.1116/1.1387456
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A fluorite-related phase of Gd2O3, with a tetragonal unit cell of a = 5.65 Angstrom and c = 5.37 Angstrom, was attained in this study. The new phase was found either in a thin Gd2O3 film (similar to 18 Angstrom), which was epitaxially grown on GaAs(100). or in a disordered (by mild Ne+-ion sputtering) and recrystallized (by UHV annealing) thin cubic alpha -Gd2O3 film. The structural characteristics of the new oxide films were studied using in situ reflection high-energy electron diffraction, secondary-electron imaging, and single-crystal x-ray diffraction. (C) 2001 American Vacuum Society.
引用
收藏
页码：1434 / 1438
页数：5
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