An analogue model of the memristor

被引：78
|
作者：
Valsa, Juraj [2 ]
Biolek, Dalibor [1 ,3 ]
Biolek, Zdenek [4 ]
机构：
[1] Brno Univ Technol, Inst Microelect, Brno, Czech Republic
[2] Brno Univ Technol, Inst Theoret & Expt Elect Engn, Brno, Czech Republic
[3] Univ Def, Inst EE, Dept EE, Brno, Czech Republic
[4] SSIER, Dept IT, Roznov Pr, Czech Republic
来源：
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2011年 / 24卷 / 04期
关键词：
memristor; constitutive relation; JFET; operational amplifier; analogue model;
D O I：
10.1002/jnm.786
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper presents a working electrical scheme modeling the memristor. The scheme allows experimenting with the model under various testing signals. The user can use it to verify the theoretical presumptions about the memristor properties. Examples of several typical measurements are shown. Copyright 2010 John Wiley & Sons, Ltd.
引用
收藏
页码：400 / 408
页数：9
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