Resistive Switching and Memory Effects in Composite Films Based on Graphene Oxide in a Matrix of Organometallic Perovskites

被引：1
|
作者：
Arkhipov, A., V [1 ]
Nenashev, G., V [1 ]
Aleshin, A. N. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
来源：
PHYSICS OF THE SOLID STATE | 2021年 / 63卷 / 04期
关键词：
organometallic perovskites; graphene oxide; electrical conductivity; resistive switching; memory cells; ORGANIC BISTABLE DEVICES; NANOPARTICLES;
D O I：
10.1134/S1063783421040041
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The resistive switching effect is studied in composite films based on organometallic perovskites CH3NH3PbBr3 and CH3NH3PbI3 with graphene oxide (GO) particles with concentration 1-3 wt % and a layer of [60]PCBM fullerene. It is found that the resistive switching effect in Ag/[60]PCBM/CH3NH3PbBr3(I-3): GO/PEDOT:PSS/ITO/glass films is observed as a sharp change from a low-conductivity state to high-conductivity state as both positive and negative biases are applied to Ag and ITO electrodes in the darkness and during illumination by a sunlight imitator. The resistive switching mechanism is assumed to be related to the capture and accumulation of charge carriers in GO particles due to the reduction/oxidation processes. The composite films studied in this work are promising for the creation of non-volatile memory cells.
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收藏
页码：525 / 529
页数：5
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