Generalized Water-Filling for Source-Aware Energy-Efficient SRAMs

被引:9
|
作者
Kim, Yongjune [1 ]
Kang, Mingu [1 ,2 ]
Varshney, Lay R. [1 ]
Shanbhag, Naresh R. [1 ]
机构
[1] Univ Illinois, Coordinated Sci Lab, 1101 W Springfield Ave, Urbana, IL 61801 USA
[2] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
Static random access memory (SRAM); information theory; convex optimization; discrete optimization; UNEQUAL ERROR PROTECTION; DESIGN; CMOS; MICROPROCESSORS; MEMORIES; ARRAY;
D O I
10.1109/TCOMM.2018.2841406
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Conventional low-power static random access memories (SRAMs) reduce read energy by decreasing the bit-line voltage swings uniformly across the bit-line columns. This is because the read energy is proportional to the bit-line swings. On the other hand, bit-line swings are limited by the need to avoid decision errors especially in the most significant bits. We propose a principled approach to determine optimal non-uniform bit-line swings by formulating convex optimization problems. For a given constraint on mean squared error of retrieved words, we consider criteria to minimize energy (for low-power SRAMs), maximize speed (for high-speed SRAMs), and minimize energy-delay product. These optimization problems can be interpreted as classical water-filling, ground-flattening and water-filling, and sand-pouring and water-filling, respectively. By leveraging these interpretations, we also propose greedy algorithms to obtain optimized discrete swings. Numerical results show that energy-optimal swing assignment reduces energy consumption by half at a peak signal-to-noise ratio of 30 dB for an 8-bit accessed word. The energy savings increase to four times for a 16-bit accessed word.
引用
收藏
页码:4826 / 4841
页数:16
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