Characteristics of InAlAs/InGaAs high electron mobility transistors under 1.3-μm laser illumination

被引：37
|
作者：
Takanashi, Y [1 ]
Takahata, K [1 ]
Muramoto, Y [1 ]
机构：
[1] NTT, Optoelect Labs, Atsugi, Kanagawa 24301, Japan
来源：
IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 12期
关键词：
D O I：
10.1109/55.735750
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The current-voltage (I-V) characteristics of InAlAs/InGaAs high electron mobility transistors (HEMT's) under illumination are investigated. The change of the drain current caused by the illumination can be explained by using the photovoltaic effect so that the excess holes photo-generated in the InGaAs channel lager accumulate at the source-electrode region and cause an effective decrease in the potential barrier for electrons between the source and the channel, The basic equations describing this phenomenon are derived on the basis of the experimental results. In addition, our experimental results are shown to support the barrier-induced hole pile-up model in which holes generated by the impact ionization accumulate in the InAlAs barrier on the source side and cause the kink effect in InAlAs/InGaAs HEMT's.
引用
收藏
页码：472 / 474
页数：3
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