Single-power-supply-based transformerless IGBT/MOSFET gate driver with 100% high-side turn-on duty cycle operation performance using auxiliary bootstrapped charge pumper

被引:0
|
作者
Lin, RL
Lee, FC
机构
来源
PESC'97: 28TH ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE - RECORD, VOLS I AND II | 1997年
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using an invented auxiliary bootstrapped charge pumper, a smart new design of single-power-supply-based transformerless IGBT/MOSFET gate driver with 100% high-side turn-on duty cycle operation performance is proposed in this paper. The experimental results of the proposed circuit have been obtained to verify the power sourcing performance of the invented transformerless auxiliary bootstrapped charge pumper for the high-side driving circuit of the single-level two-switch half-bridge using the same single power supply of the low-side driving circuit. Also, with the help of the invented auxiliary bootstrapped charge pumper, the application of the single-level two-switch half-bridge can be extended to the applications of multi-level multi-switch half-bridges.
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页码:1205 / 1209
页数:5
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