Cryogenic Evaluation of A 30-50 GHz 0.15-μm MHEMT Low Noise Amplifier for Radio Astronomy Applications

被引：0
|
作者：
Weng, Shou-Hsien [1 ]
Chang, Hong-Yeh [1 ]
Chiong, Chau-Ching [2 ]
Chen, Ming-Tang [2 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Taoyuan 32001, Taiwan
[2] Acad Sinica, Inst Astron & Astrophys, Taipei 10617, Taiwan
来源：
2011 41ST EUROPEAN MICROWAVE CONFERENCE | 2011年
关键词：
broadband; cryogenic; low noise amplifier; MHEMT; radio astronomy; HEMT; PERFORMANCE; GAAS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cryogenic evaluation of a 30-50 GHz 0.15-mu m InGaAs metamorphic high electron mobility transistor (MHEMT) low noise amplifier (LNA) for radio astronomy applications is presented in this paper. For the on-wafer measurement, the LNA exhibits a bandwidth of 23 GHz with a small signal gain of 20.4 dB. For the cryogenic measurement, the LNA is further assembled in a packaged module. At a cryogenic temperature of 16 K, the best equivalent noise temperature is 23.4 K at 30.5 GHz. The proposed MHEMT LNA can be compared with the advanced InP-based LNAs, and has potential for the radio astronomy applications due to its broad bandwidth and low noise figure.
引用
收藏
页码：934 / 937
页数：4
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