Temperature dependence of current-voltage characteristics of npn-type GaN/InGaN double heterojunction bipolar transistors

被引：9
|
作者：
Nishikawa, Atsushi [1 ]
Kumakura, Kazuhide [1 ]
Makimoto, Toshiki [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 13期
关键词：
D O I：
10.1063/1.2793819
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the temperature dependence of the common-emitter current-voltage (I-V) characteristics of npn-type GaN/InGaN double heterojunction bipolar transistors. Although the current gain decreases with increasing measurement temperature, the current gain measured at 300 degrees C is still as high as 308. The reduction of the current gain with temperature is attributed not only to the hole back-injection current from the base into the emitter but also to the shorter minority carrier diffusion length due to the increase in the carrier concentration of the p-InGaN base. (c) 2007 American Institute of Physics.
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