CURRENT STATUS AND FUTURE PROSPECT FOR THIN FILM SILICON BASED PHOTOVOLTAIC MODULE MANUFACTURING TECHNOLOGY AT HANERGY

被引：0

作者：

Xu, Xixiang ^{[1
]}

Zhao, Hui ^{[1
]}

Ru, Xiaoning ^{[1
]}

Zhou, Xinghong ^{[1
]}

Hong, Chengjian ^{[1
]}

Lian, Chongyan ^{[1
]}

Peng, Changtao ^{[1
]}

Qu, Minghao ^{[1
]}

Zhang, Yue ^{[1
]}

Yu, Cao ^{[1
]}

Hu, Anhong ^{[1
]}

Huang, James ^{[1
]}

Xiao, Jack ^{[1
]}

Hu, Chuck ^{[1
]}

Zhang, Jinyan ^{[1
]}

Li, Yuanmin ^{[1
]}

机构：

[1] Chengdu R&D Ctr, Hanergy Solar Grp, Chengdu, Sichuan, Peoples R China

来源：

2015 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE | 2015年

关键词：

HETEROJUNCTION SOLAR-CELLS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the recent progress in the development of a-Si/a-SiGe and a-Si/nc-Si multijunction solar cells on the product size substrate of 0.79m(2), and heterojunction solar cells on 152.3cm(2) n-type silicon wafer at Hanergy. Main experimental results cover three aspects: ( a) for a-Si/a-SiGe multijunction solar cells, significant improvement in a-Si/a-SiGe triple junction PV module efficiency by optimizing a-Si and a-SiGe component cell performance, (b) for a-Si/nc-Si double junction solar cells, optimization of a-Si thin film and doped layer/buffer layer used for a-Si top cells, and device quality nc-Si bottom cells, and (c) for heterojunction solar cell, development of intrinsic a-Si for superior silicon wafer surface passivation, wafer surface texturing process, n-type a-Si thin films as window layers, and ITO layers. We attained 11% initial total area efficiency for a-Si/a-SiGe triple junction modules, and 12.8% initial total area efficiency for a-Si/nc-Si double junction modules, and 21.7% total area efficiency for heterojunction solar cells using n-type wafers.

引用

页数：7

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