Wall conditioning and ELM mitigation with boron nitride powder injection in KSTAR

被引:19
|
作者
Gilson, E. P. [1 ]
Lee, H. H. [2 ]
Bortolon, A. [1 ]
Choe, W. [3 ]
Diallo, A. [1 ]
Hong, S. H. [2 ]
Lee, H. M. [2 ]
Lee, J. [2 ,4 ]
Maingi, R. [1 ]
Mansfield, D. K. [1 ]
Nagy, A. [1 ]
Park, S. H. [2 ]
Song, I. W. [3 ]
Song, J. I. [2 ]
Yun, S. W. [2 ]
Yoon, S. W. [2 ]
Nazikian, R. [1 ]
机构
[1] Princeton Plasma Phys Lab, 100 Stellarator Rd, Princeton, NJ 08543 USA
[2] Korea Inst Fus Energy, 169-148 Gwahak Ro, Daejeon 34133, South Korea
[3] Korea Adv Inst Sci & Technol, 291 Daehak Ro, Daejeon 34141, South Korea
[4] Korea Univ Sci & Technol, Dept Accelerator & Nucl Fus Phys Engn, 217 Gajeong Ro, Daejeon 34113, South Korea
基金
新加坡国家研究基金会;
关键词
Wall conditioning; Edge-localized mode; ELM; Impurity; Boron nitride;
D O I
10.1016/j.nme.2021.101043
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Results from KSTAR powder injection experiments, in which tens of milligrams of boron nitride (BN) were dropped into low-power H-mode plasmas, show an improvement in wall conditions in subsequent discharges and, in some cases, a reduction or elimination of edge-localized modes (ELMs). Injected powder is distributed by the plasma flow and is deposited on the wall and, over the course of several discharges, was observed to gradually reduce recycling by 33%, and decrease both the ELM amplitude and frequency. This is the first demonstration of the use of BN for ELM mitigation. In all of these experiments, an Impurity Powder Dropper (IPD) was used to introduce precise, controllable amounts of the materials into ELMy H-mode KSTAR discharges. The plasma duration was between 10 s and 15 s, I-p = 500 kA, B-T = 1.8 T, P-NBI = 1.6 MW, and P-ECH = 0.6 MW. Plasma densities were between 2 and 3 x 10(19) m(-3). In all cases, the pre-fill and startup gas-fueling was kept constant, suggesting that the decrease in baseline D-alpha emission is in fact due to a reduction in recycling. The results presented herein highlight the viability of powder injection for intra-shot and between-shot wall conditioning.
引用
收藏
页数:6
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