Irradiation of the CLARO-CMOS chip, a fast ASIC for single-photon counting

被引:7
|
作者
Andreotti, M. [1 ,2 ]
Saldini, W. [1 ,2 ]
Calabrese, R. [1 ,2 ]
Carniti, P. [3 ,4 ]
Cassina, L. [3 ,4 ]
Ramusino, A. Cotta [1 ,2 ]
Fiorini, M. [1 ,2 ]
Giachero, A. [3 ,4 ]
Gotti, C. [3 ,4 ]
Luppi, E. [1 ,2 ]
Maino, M. [3 ,4 ]
Malaguti, R. [1 ,2 ]
Pessina, G. [3 ,4 ]
Tomassetti, L. [1 ,2 ]
机构
[1] Univ Ferrara, I-44100 Ferrara, Italy
[2] Ist Nazl Fis Nucl, Sez Ferrara, Ferrara, Italy
[3] Univ Milano Bicocca, Milan, Italy
[4] Ist Nazl Fis Nucl, Sez Milano Bicocca, Milan, Italy
关键词
Front-end electronics; Radiation hardness; Photomultipliers; Photon counting;
D O I
10.1016/j.nima.2014.12.012
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The CLARO-CMOS is a prototype ASIC that allows fast photon counting with low power consumption, built in AMS 0.35 mu m CMOS technology. It is intended to be used as a front-end readout for the upgraded LHCb RICH detectors. In this environment, assuming 10 years of operation at the nominal luminosity expected after the upgrade, the ASIC must withstand a total fluence of about 6 x 10(12) 1 MeV n(eq)/cm(2) and a total ionising dose of 400 krad. Long term stability of the electronics front-end is essential and the effects of radiation damage on the CLARO-CMOS performance must be carefully studied. This paper desciibes results of multi-step irradiation tests with protons up to the dose of similar to 8 Mrad, including measurement of single event effects during irradiation and chip performance evaluation before and after each irradiation step. (C) 2014 Elsevier B.V. All rights reserved
引用
收藏
页码:234 / 235
页数:2
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