Characteristics of broad-area InGaAs submonolayer quantum-dot vertical-cavity surface-emitting lasers

被引：2

作者：

Yang, Hung-Pin D. ^{[1
]}

Hsu, I-Chen

Lai, Fang-I

Lin, Gray

Hsiao, Ru-Shang

Maleev, Nikolai A.

Blokhin, Sergej A.

Kuo, Hao-Chung

Chi, Jim Yung

机构：

[1] Nanophoton Ctr, Ind Technol Res Inst, Hsinchu 310, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30050, Taiwan

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 10A期

关键词：

broad-area; submonolayer; quantum-dot; VCSEL;

D O I：

10.1143/JJAP.46.6670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A broad-area InGaAs submonolayer (SML) quantum-dot vertical-cavity surface-emitting laser (QD VCSEL) for fiber-optic applications is demonstrated. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (< 1 ML) and GaAs. A maximum CW output power of 12.2 mW at 30 mA has been achieved in the 990 nm range, with a threshold current of 1 mA.

引用

页码：6670 / 6672

页数：3

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