Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study

被引:96
|
作者
Rastogi, Priyank [1 ]
Kumar, Sanjay [2 ]
Bhowmick, Somnath [3 ]
Agarwal, Amit [2 ]
Chauhant, Yogesh Singh [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
[2] Indian Inst Technol, Dept Phys, Kanpur 208016, Uttar Pradesh, India
[3] Indian Inst Technol, Dept Mat Sci & Engn, Kanpur 208016, Uttar Pradesh, India
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2014年 / 118卷 / 51期
关键词
GRAPHENE; TRANSISTORS;
D O I
10.1021/jp510662n
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using density functional theory calculations, we have systematically explored the effect of surface adsorption of different atoms on the electronic properties of monolayer molybdenum disulfide (MoS2). We have chosen a few representative members from each group in the periodic table, ranging from alkali metals (group I) to halogens (group VII), and calculated the electronic band structure of the adatomMoS(2) system for the most energetically stable location of the adatom adsorbed on MoS2. The calculated value of charge transfer from the adsorbed adatom to MoS2 and resultant shifting of the Fermi level to the conduction band suggest that the group I (Li, Na, K) and group II metals (Mg, Ca) are the most effective adatoms to enhance the n-type mobile carrier density in MoS2. Our calculation is in good agreement with the experimental observation for K [Nano Lett. 2013, 13, 1991].
引用
收藏
页码:30309 / 30314
页数:6
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