Ultrafast insulator-to-metal switching by photoinduced Mott transition

被引:0
|
作者
Iwai, S [1 ]
Okimoto, Y
Ono, M
Matsuzaki, H
Maeda, A
Kishida, H
Okamoto, H
Tokura, Y
机构
[1] Tohoku Univ, Sendai, Miyagi 9808578, Japan
[2] PRESTO JST, Kawaguchi 3320012, Japan
[3] AIST, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3050046, Japan
[4] Univ Tokyo, Tokyo 1130033, Japan
来源
ULTRAFAST PHENOMENA XIV | 2005年 / 79卷
关键词
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中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrated the ultrafast photoinduced Mott transition from a charge transfer (CT) insulator to a metal in a halogen-bridged Ni chain compound by visible-mid IR pump-probe reflection spectroscopy. Upon the excitation of the CT band, the spectral weight of the gap transition is transferred to the inner-gap region. When the excitation density exceeds 0.1 per Ni site, the Drude-like high-reflection band appears in the infrared region, indicating the formation of a metallic state. The photogeneration of the metallic state and the subsequent recovery of the original insulating state occur within a few picoseconds.
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页码:340 / 342
页数:3
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