Two-tone IMD asymmetry in microwave power amplifiers

被引：0
|
作者：
Carvalho, NB [1 ]
Pedro, JC [1 ]
机构：
[1] Univ Aveiro, Inst Telecommun, P-3810193 Aveiro, Portugal
来源：
2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the first study of the relation between the IMD asymmetries, often observed in almost all power amplifiers subject to a two-tone test, and the nonlinear characteristics of their active devices. First, the reasons for the different amplitudes of the two adjacent tones are investigated using a general circuit with frequency dependent embedding impedances, and resistive and reactive nonlinearities. Those theoretical conclusions are then extrapolated for real circuits, and validated by comparing results obtained from nonlinear simulation to laboratory measurements of a microwave power amplifier.
引用
收藏
页码：445 / 448
页数：4
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