Glancing-angle ion-assisted deposition of ZnO thin films

被引:10
|
作者
Ruthe, KC [1 ]
Barnett, SA [1 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
zinc oxide; sputter deposition; ion bombardment; atomic force microscopy; surface structure; morphology; roughness; and topography; electron microscopy; X-ray scattering; diffraction; and reflection;
D O I
10.1016/S0039-6028(03)00601-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Undoped ZnO thin films were deposited on unheated sapphire and glass substrates under concurrent glancing-angle Ar+ ion bombardment. Surface roughness decreased from 18 to 3.5 nm in films grown on glass, and from 11 to 0.5 nm on sapphire, as the ion-to-neutral atom ratio increased from 0 to 0.25. Film microstructure observations by cross-sectional electron microscopy indicated increased film density when glancing-angle ions were used. The glancing-angle ions had little effect on film residual stress; this is in contrast to normal-incidence ion bombardment that typically increases compressive stresses. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:L460 / L464
页数:5
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