Towards reaction-diffusion computing devices based on minority-carrier transport in semiconductors

被引:12
|
作者
Asai, T
Adamatzky, A
Amemiya, Y
机构
[1] Hokkaido Univ, Dept Elect Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Univ W England, Fac Comp Engn & Math Sci, Bristol BS16 1QY, Avon, England
关键词
D O I
10.1016/j.chaos.2003.09.041
中图分类号
O1 [数学];
学科分类号
0701 ; 070101 ;
摘要
Reaction-diffusion (RD) chemical systems are known to realize sensible computation when both data and results of the computation are encoded in concentration profiles of chemical species; the computation is implemented via spreading and interaction of either diffusive or phase waves. Thin-layer chemical systems are thought of therefore as massively-parallel locally-connected computing devices, where micro-volume of the medium is analogous to an elementary processor. Practical applications of the RD chemical systems are reduced however due to very low speed of traveling waves which makes real-time computation senseless. To overcome the speed-limitations while preserving unique features of RD computers we propose a semiconductor RD computing device where minority carriers diffuse as chemical species and reaction elements are represented by p-n-p-n diodes. We offer blue-prints of the RD semiconductor devices, and study in computer simulation propagation phenomena of the density wave of minority carriers. We then demonstrate what computational problems can be solved in RD semiconductor devices and evaluate space-time complexity of computation in the devices. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:863 / 876
页数:14
相关论文
共 50 条
  • [1] A CMOS reaction-diffusion device using minority-carrier diffusion in semiconductors
    Takahashi, Motoyoshi
    Asai, Tetsuya
    Hirose, Tetsuya
    Amemiya, Yoshihito
    INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS, 2007, 17 (05): : 1713 - 1719
  • [2] A novel reaction-diffusion system based on minority-carrier transport in solid-state CMOS devices
    Asai, T
    Nishimiya, Y
    Amemiya, Y
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 141 - 144
  • [3] ANALYSIS OF MINORITY-CARRIER TRANSPORT IN POLYSILICON DEVICES
    FOSSUM, JG
    SUNDARESAN, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) : 1185 - 1197
  • [4] MINORITY-CARRIER TRANSPORT IN III-V SEMICONDUCTORS
    LUNDSTROM, MS
    MINORITY CARRIERS IN III-V SEMICONDUCTORS: PHYSICS AND APPLICATIONS, 1993, 39 : 193 - 258
  • [5] MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS
    MANIFACIER, JC
    HENISCH, HK
    PHYSICAL REVIEW B, 1978, 17 (06): : 2640 - 2647
  • [6] DETECTION OF MINORITY-CARRIER TRAPS IN SEMICONDUCTORS
    LEMKE, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : 539 - 545
  • [7] MINORITY-CARRIER LIFETIME IN POLYCRYSTALLINE SEMICONDUCTORS
    KUMAR, KR
    SATYAM, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (02): : 467 - 470
  • [8] DIRECT MEASUREMENT OF MINORITY-CARRIER DIFFUSION LENGTH IN PLANAR DEVICES
    BOUDJANI, A
    BASSOU, G
    BENBAKHTI, T
    BEGHDAD, M
    BELMEKKI, B
    SOLID-STATE ELECTRONICS, 1995, 38 (02) : 471 - 475
  • [9] Minority-carrier thermoelectric devices
    Pipe, KP
    Ram, RJ
    Shakouri, A
    XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02, 2002, : 299 - 301
  • [10] MINORITY-CARRIER INJECTION INTO RELAXATION SEMICONDUCTORS
    MOREAU, Y
    MANIFACIER, JC
    HENISCH, HK
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2904 - 2909