Preparation of aluminium-doped ZnO films by helicon-wave excited plasma sputtering

被引：0

作者：

Yamaki, Y ^{[1
]}

Yamaya, K ^{[1
]}

Araya, H ^{[1
]}

Nakanishi, H ^{[1
]}

Chichibu, S ^{[1
]}

机构：

[1] Sci Univ Tokyo, Fac Sci & Technol, Noda, Chiba 2788510, Japan

来源：

BLUE LASER AND LIGHT EMITTING DIODES II | 1998年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Predominantly c[0001]-axis oriented aluminium-doped or undoped ZnO thin films were deposited using the helicon-wave excited plasma (HWP) as a sputtering source. The ZnO:Al thin films grown on soda-lime glass substrates exhibited narrow (0002) x-ray diffraction (XRD) peak with full width at half maximum (FWHM) of 0.29 deg. The ZnO:Al thin film deposited at 300 degrees C showed low resistivity of 5 x 10-4 Omega . cm without any additional annealings. Moreover, high optical transmittance greater than 85% was achieved in the visible spectral wavelengths. The HWP-sputtering method is expected as one of the versatile techniques for the preparation of semiconductor thin films.

引用

页码：48 / 51

页数：4

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