Surface Characterization of (Fe, Cu)/Si(100) Thin Films

被引：0

作者：

Zolanvari, A. ^{[1
]}

Sadeghi, H. ^{[1
]}

Nezamdost, J. ^{[1
]}

机构：

[1] Univ Arak, Dept Phys, Arak, Iran

来源：

JOURNAL OF SCIENTIFIC CONFERENCE PROCEEDINGS, VOL 2 , NO 1 | 2010年 / 2卷 / 01期

关键词：

Thin Films; Root Mean Square; Roughness; MORPHOLOGY; SI(100); SI(111); HYDROGEN; SI;

D O I：

10.1166/jcp.2010.1011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Growth and characterization of Fe and Cu thin films have been studied with 5-200 nm and 50-150 nm thicknesses on p-type Si(100) substrate, respectively. Root Mean Square (RMS), RMS slope and other structural parameters are calculated for Fe and Cu thin films, using X-ray diffraction and Atomic Force Microscopy (AFM) instruments. The roughness and deposition conditions of Fe and Cu layers have also been studied. The RMS values of standard deviation determined from average position of sample surfaces. The results show mentioned parameter for Fe layers 0.5-1.5 nm as well as 1-2 nm for Cu with 45 degrees texture direction. Electrical properties of these layers have been investigated using Four Point Probe (FP) device.

引用

页码：53 / 55

页数：3

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