Experimental and Simulation Studies of the Effects of Heavy-Ion Irradiation on HfO2-Based RRAM Cells

被引：17
|
作者：
Alayan, M. [1 ]
Bagatin, M. [2 ]
Gerardin, S. [2 ,3 ]
Paccagnella, A. [2 ,3 ]
Larcher, L. [4 ]
Vianello, E. [1 ]
Nowak, E. [1 ]
De Salvo, B. [1 ]
Perniola, L. [1 ]
机构：
[1] CEA LETI, F-38054 Grenoble, France
[2] Univ Padua, RREACT Grp, Dipartimento Ingn Informaz, I-35131 Padua, Italy
[3] Ist Nazl Fis Nucl, I-35131 Padua, Italy
[4] Univ Modena & Reggio Emilia, I-42122 Modena, Italy
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2017年 / 64卷 / 08期
关键词：
Flash; physics-based simulations; radiation effects; resistive memories; single-event upset; ELECTRICAL CHARACTERISTICS; IONIZING-RADIATION; TAOX; MEMORIES; UPSETS; IMPACT;
D O I：
10.1109/TNS.2017.2721980
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
HfO2-based resistive RAMs have been irradiated with high-linear energy transfer heavy ions and subjected to an extensive characterization, showing that the cells are immune from upsets. No relevant changes were observed in the irradiated cells on resistance distribution and programming voltages. The irradiation experiment has been performed without any applied bias (retention mode). Reasons for the observed hardness are discussed using physics-based simulations. Moreover, simulations put in evidence that the cell might be sensitive if it is struck during a read operation, since the applied read voltage prevents the instantaneous recombination of the generated defects due to the Coulomb interaction between oxygen ions and vacancies.
引用
收藏
页码：2038 / 2045
页数：8
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