Implanted silicon detector telescope: New developments

被引:12
|
作者
Musumarra, A
Amorini, F
Cabibbo, M
Cardella, G
DeGeronimo, G
DiPietro, A
Fallica, PG
Figuera, P
Papa, M
Pappalardo, G
Rizzo, F
Tudisco, S
机构
[1] Ist Nazl Fis Nucl, Lab Nazl Sud, I-95129 Catania, Italy
[2] Univ Catania, I-95124 Catania, Italy
[3] Politecn Milan, I-20133 Milano, Italy
[4] Ist Nazl Fis Nucl, Sez Milano, I-95129 Catania, Italy
[5] SGS Thomson, Catania, Italy
[6] CEA, DSM, DAPNIA, SPhN, Saclay, France
[7] Univ Edinburgh, Dept Phys & Astron, Edinburgh EH8 9YL, Midlothian, Scotland
关键词
D O I
10.1016/S0168-9002(98)00115-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
As a result of a collaboration between SGS-Thomson and INFN, a Monolithic Silicon Detector Telescope with Delta E/E of 4 x 4 mm(2) with an ultra-thin Delta E stage (1 mu m) has been recently presented as a tool to identify low-energy heavy ions. The good performances obtained in the charge identification are anyway limited by the relatively small active area. We report on two new larger area Delta E/E telescopes. The first one, a five strip detector with each Delta E/E strip 3 x 4 mm(2) and a common E stage, has given on-beam good results. The second one, a 20 x 20 mm(2) active area, is under test and is limited by the high capacitance of the Delta E stage (40 nF) requiring a suitable front-end electronics, presented in a different communication. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:414 / 416
页数:3
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