Photoluminescence study of GaN/InGaN multiquantum well structures at room temperature

被引：4
|
作者：
Saito, S
Onomura, M
Nishio, J
Sugiura, L
Itaya, K
Sugawara, H
Ishikawa, M
机构：
[1] Toshiba Corp, Adv Semicond Devices Res Labs, R&D Ctr, Saiwai Ku, Kawasaki, Kanagawa 210, Japan
[2] Toshiba Corp, Optoelect Semicond Engn Dept, Saiwai Ku, Kawasaki, Kanagawa 210, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷
关键词：
D O I：
10.1016/S0022-0248(98)00183-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The room temperature photoluminescence (PL) of InGaN-based multiple quantum well (MQW) structures was studied. The PL intensity was significantly dependent on the well width and depth. The maximum PL intensity from an MQW with In0.15Ga0.85N wells was produced for a 2 nm well. the intensity decreased significantly for thinner and thicker ones. Also, the PL intensity increased exponentially with the energy band gap difference between well and barrier layers. A deep well was effective for the improvement of luminescence efficiency. (C) 1998 Elsevier Science B.V. All rights reserved.
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收藏
页码：128 / 132
页数：5
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