Preparation of Cu films on polymer substrate by ECR-MOCVD coupled with DC bias at room temperature

Cu/C films were prepared at ambient temperature under Cu(hfac)(2)Ar-H-2 atmosphere in order to obtain metallized polymer by using ECR-MOCVD (Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with DC bias system. DC bias selectively induces the positively charged copper ions and then makes them deposit on the polymer substrate. Structural analysis of the films by ECR showed that fine copper grains embedded in an amorphous polymer matrix with indistinctive interfacial layer. DC bias voltage applied above the substrate strongly affected the crystallographic structure and composition as well as surface roughness of the copper films. It was found that deposition rate increased linearly with the increase of bias voltage. Sheet electrical resistance of films sharply decreased as bias voltage increased. Therefore, the bias voltage appeared to be a critical deposition parameter for preparing pure copper films with low resistance.