Donor-acceptor recombination in type-II GaAs/AlAs superlattices

被引：2
|
作者：
Zhuravlev, KS [1 ]
Gilinskii, AM
Shamirzaev, TS
Preobrazhenskii, VV
Semyagin, BR
Putyato, MA
Chipkin, SS
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Siberian State Geodet Acad, Novosibirsk 630108, Russia
来源：
PHYSICS OF THE SOLID STATE | 1998年 / 40卷 / 09期
关键词：
D O I：
10.1134/1.1130604
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A study is reported of steady- and nonsteady-state photoluminescence of intentionally undoped and uniformly silicon-doped type-II (GaAs)(7)(AlAs)(9) superlattices grown by MBE simultaneously on (311)A- and (100)-oriented GaAs substrates. It has been established that at elevated temperatures (160>T>30 K) the superlattice spectra are dominated by the line due to the donor-acceptor recombination between donors in the AlAs layers and acceptors located in the GaAs layers. The total carrier binding energy to the donor and acceptor in a pair has been determined. (C) 1998 American Institute of Physics. [S1063-7834(98)03609-0].
引用
收藏
页码：1577 / 1581
页数：5
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