Investigation of body bias effect in P-GaN Gate HEMT devices

被引：0

作者：

Chiu, Hsien-Chin ^{[1
]}

Peng, Li-Yi ^{[1
]}

Yang, Chih-Wei ^{[1
]}

Wang, Hsiang-Chun ^{[1
]}

Chien, Feng-Tso ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, 259 Wen Hwa 1st Rd, Taoyuan, Taiwan

来源：

2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2014年

关键词：

GaN; HEMT; field plate; low frequency noise; FIELD-PLATE; ALGAN/GAN HEMTS; TRANSISTOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaN/GaN HEMTs with various field-plate (FP) and gate-to-drain distance extensions are fabricated and investigated. An experiment is carried out on 20 transistors. Their on-state resistance (Ron), off-state breakdown voltage (VBR), RF performance and low frequency noise are measured and studied. The FP extension is found significantly to improve the off-state breakdown voltage. However, the FP extension obviously weakens the frequency response and power added efficiency (PAE) performance, because it increases the feedback Cgd. The FP extension is beneficial to the reduction of the electric field intensity at the gate edge of the device, and reduces the probability of the injection of electrons into traps, resulting in the reduction of the low frequency noise.

引用

页码：795 / 797

页数：3

共 50 条

[1] Investigation of Dynamic EOSS in p-GaN Gate AlGaN/GaN HEMT
Huang, Yifei
Jiang, Qimeng
Yao, Yixu
Huang, Sen
Wang, Xinhua
Liu, Xinyu
IEEE ELECTRON DEVICE LETTERS, 2024, 45 (12) : 2339 - 2342
[2] Gate lifetime investigation at low temperature for p-GaN HEMT
Alam, M.
Rustichelli, V.
Zerarka, M.
Banc, C.
Pieprzyk, J.
Perrotin, O.
Ceccarelli, R.
Tremouilles, D.
Matmat, M.
Coccetti, F.
MICROELECTRONICS RELIABILITY, 2025, 168
[3] Dynamic gate leakage current of p-GaN Gate AIGaN/GaN HEMT under positive bias Conditions
Sun, Yu
Wang, Maojun
Lei, Wen
Han, Chun
2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021), 2021, : 232 - 235
[4] Impact of OFF-state Gate Bias on Dynamic RON p-GaN Gate HEMT
Jiang, Zuoheng
Hua, Mengyuan
Huang, Xinran
Li, Lingling
Chen, Junting
Chen, Kevin J.
2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2021, : 47 - 50
[5] Gate Reliability of p-GaN HEMT With Gate Metal Retraction
Tallarico, A. N.
Stoffels, S.
Posthuma, N.
Bakeroot, B.
Decoutere, S.
Sangiorgi, E.
Fiegna, C.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (11) : 4829 - 4835
[6] On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices
Efthymiou, L.
Longobardi, G.
Camuso, G.
Chien, T.
Chen, M.
Udrea, F.
APPLIED PHYSICS LETTERS, 2017, 110 (12)
[7] Reverse Conduction Induced Dynamic Ron Effect in GaN HEMT with p-GaN Gate
Sun, Shaoyu
Xia, Ling
Wu, Wengang
Jin, Yufeng
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), 2021,
[8] Dynamic Threshold Voltage in p-GaN Gate HEMT
Wei, Jin
Xu, Han
Xie, Ruiliang
Zhang, Meng
Wang, Hanxing
Wang, Yuru
Zhong, Kailun
Hua, Mengyuan
He, Jiabei
Chen, Kevin J.
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2019, : 291 - 294
[9] p-GaN Gate HEMT With Surface Reinforcement for Enhanced Gate Reliability
Zhang, Li
Zheng, Zheyang
Yang, Song
Song, Wenjie
He, Jiabei
Chen, Kevin J.
IEEE ELECTRON DEVICE LETTERS, 2021, 42 (01) : 22 - 25
[10] GaN power IC technology on p-GaN gate HEMT platform
Wei, Jin
Tang, Gaofei
Xie, Ruiliang
Chen, Kevin J.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59

← 1 2 3 4 5 →