Growth of InSb thin films on GaAs(100) substrates by flash evaporation epitaxy

被引：10

作者：

Szwadowski, M ^{[1
]}

Berus, T ^{[1
]}

Borowska, A ^{[1
]}

Czajka, R ^{[1
]}

Zimniak, M ^{[1
]}

机构：

[1] Politechn Poznanska, Inst Fizyki, PL-60965 Poznan, Poland

来源：

E-MRS 2003 FALL MEETING, SYMPOSIA A AND C, PROCEEDINGS | 2004年 / 1卷 / 02期

关键词：

D O I：

10.1002/pssc.200303943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A two-stage flash-evaporation epitaxy of InSb thin films on GaAs(100) substrates is developed. In the first, low temperature stage, a buffer layer of thickness of about 20 nm is deposited. In the second, high temperature stage the bulk of the film is deposited. Thus obtained InSb films have good structural and electrical properties, comparable with those obtained by MBE. They can be used for practical applications, e.g. for Hall sensors. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：351 / 354

页数：4

共 50 条

[1] Thin InSb films on GaAs substrates by molecular beam epitaxy
Li, Zhanguo
Liu, Guojun
Li, Mei
You, Minghui
Li, Lin
Xiong, Min
Wang, Yong
Zhang, Baoshun
Wang, Xiaohua
Japanese Journal of Applied Physics, 2008, 47 (1 PART 2): : 558 - 560
[2] Thin InSb films on GaAs substrates by molecular beam epitaxy
Li, Zhanguo
Liu, Guojun
Li, Mei
You, Minghui
Li, Lin
Xiong, Min
Wang, Yong
Zhang, Baoshun
Wang, Xiaohua
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) : 558 - 560
[3] FLASH EVAPORATION OF INSB ON I-GAAS SUBSTRATES
OSZWALDOWSKI, M
SLANY, M
VACUUM, 1992, 43 (5-7) : 617 - 618
[4] Two-dimensional growth of InSb thin films on GaAs(111)A substrates
Kanisawa, K
Yamaguchi, H
Hirayama, Y
APPLIED PHYSICS LETTERS, 2000, 76 (05) : 589 - 591
[5] Electrical and structural properties of flash evaporation InSb thin films
Al-Ani, S. K. J.
Obaid, Y. N.
Kasim, S. J.
Mahdi, M. A.
INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS, 2009, 2 (01): : 99 - +
[6] CLEANING CHEMISTRY OF GAAS(100) AND INSB(100) SUBSTRATES FOR MOLECULAR-BEAM EPITAXY
VASQUEZ, RP
LEWIS, BF
GRUNTHANER, FJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 791 - 794
[7] GROWTH OF (111) AND (100) CDTE-FILMS ON (100) GAAS SUBSTRATES BY HOT WALL EPITAXY
KORENSTEIN, R
MACLEOD, B
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 382 - 385
[8] DEPOSITION OF INSB FILMS BY FLASH EVAPORATION
LAYER, EH
REID, FJ
AUSTIN, AE
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (08) : C192 - C192
[9] PULSED FLASH EVAPORATION OF INSB FILMS
AN, N
NHO, PV
HUYNH, TH
SUNG, NV
SCHURIG, T
HERRMANN, R
CRYSTAL RESEARCH AND TECHNOLOGY, 1987, 22 (05) : K91 - K93
[10] MOLECULAR-BEAM EPITAXY GROWTH OF INSB FILMS ON GAAS
DAVIS, JL
THOMPSON, PE
APPLIED PHYSICS LETTERS, 1989, 54 (22) : 2235 - 2237

← 1 2 3 4 5 →