NUMERICAL SIMULATIONS OF TRIPLE-JUNCTION GaInP/GaAs/Ge SOLAR CELLS TO PROVIDE INSIGHT INTO FILL-FACTOR LOSSES AT HIGH CONCENTRATION

被引：1
|
作者：
Kanevce, Ana [1 ]
Olson, Jerry M. [1 ]
Metzger, Wyatt K. [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO USA
来源：
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年
关键词：
DUAL-JUNCTION;
D O I：
10.1109/PVSC.2010.5616586
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We have modeled a Ga0.5In0.5P/GaAs/Ge triple junction solar cell, including two Esaki diodes, to analyze how performance changes with illumination intensity. As has been observed experimentally, fill factor (FF) is the primary aspect of performance that limits efficiency at high concentration levels. The FF decreases because of series resistance and barriers created by the GaAs/GaInP back surface field. By adjusting carrier concentration or the material associated with the back surface field (BSF) and the carrier concentration in the absorber, FF losses can be reduced and efficiency enhanced at high concentration levels.
引用
收藏
页码：2066 / 2069
页数：4
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