Gamma irradiation-induced effects on the electrical properties of HfO2-based MOS devices

被引：18
|
作者：
Manikanthababu, N. [1 ]
Arun, N. [1 ]
Dhanunjaya, M. [1 ]
Rao, S. V. S. Nageswara [1 ]
Pathak, A. P. [1 ]
机构：
[1] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2016年 / 171卷 / 1-2期
关键词：
high-k dielectrics; MOS devices; I-V; C-V measurements; oxide traps; interface trap densities and gamma irradiation; HAFNIUM; DAMAGE;
D O I：
10.1080/10420150.2015.1135152
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
Hafnium Oxide (HfO2) thin films were synthesized by e-beam evaporation and Radio frequency magnetron sputtering techniques. Au/HfO2/Si-structured Metal Oxide Semiconductor capacitors have been fabricated to study the effects of gamma irradiation on the electrical properties, leakage current versus voltage (I-V) and capacitance versus voltage (C-V) characteristics, as a function of irradiation dose. Systematic increase in leakage current as well as accumulation capacitance has been observed with increase in the irradiation dose. The influence of gamma irradiation and pre-existing defects on the evolution of oxide and interface traps have been studied in detail.
引用
收藏
页码：77 / 86
页数：10
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