Impacts of a buffer layer and hi-wafers on the performance of strained-channel NMOSFETs with SiN capping layer

被引：0
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作者：
Tsai, Tzu-, I [1 ]
Lee, Yao-Jen [4 ]
Chen, King-Sheng [2 ]
Wang, Jeff [3 ]
Wan, Chia-Chen [2 ]
Hsueh, Fu-Kuo [4 ]
Lin, Horng-Chih [1 ,4 ]
Chao, Tien-Sheng
Huang, Tiao-Yuan [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan
[2] Natl Chiao Tung Univ, Dept Phys Elect, Hsinchu, Taiwan
[3] Univ Waterloo, Dept Nanotechnol Engn, Waterloo, ON, Canada
[4] Natl Nano Device Labs, Hsinchu, Taiwan
来源：
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2 | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：329 / +
页数：2
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