Low temperature reoxidation mechanism in nanocrystalline TiO2-δ thin films

被引:14
|
作者
Rothschild, A [1 ]
Komem, Y
Cosandey, F
机构
[1] Technion Israel Inst Technol, Fac Mat Engn, IL-32000 Haifa, Israel
[2] Rutgers State Univ, Dept Ceram & Mat Engn, Piscataway, NJ 08854 USA
关键词
D O I
10.1149/1.1379952
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
This paper deals with the reoxidation of nanocrystalline TiO2-delta thin films during exposure to ambient oxygen at relatively low temperatures. A phenomenological model is proposed to describe the reoxidation mechanism and its influence on the electrical conductance's sensitivity to oxygen, taking into account both surface and bulk processes. Chemisorption of oxygen predominates during the first few minutes, followed by diffusion of oxygen into the film and recombination with oxygen vacancies. The model describes the kinetics of the Change in the electrical conductance during th transition from the initial to the final equilibrium states. Logarithmic and modified parabolic laws are derived to describe the change in the conductance as a function of time during the first (surface-controlled) and second (bulk-controlled) stages of the reoxidation reaction, respectively. It is demonstrated that these expressions fit very well with experimental results from nanocrystalline TiO2-delta thin Elms during exposure to ambient oxygen at constant temperatures between 200 and 325 degreesC. (C) 2001 The Electrochemical Society. [DOI: 10.1149/1.1379952] All rights reserved.
引用
收藏
页码:H85 / H89
页数:5
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