Point defect scattering in silicon nanowires

被引：0
|
作者：
Pecchia, Alessandro [1 ]
Penazzi, Gabriele [2 ]
机构：
[1] CNR, ISMN, Via Salaria,Km 29-300, I-00016 Monterotondo, Italy
[2] Univ Roma Tor Vergata, I-00133 Rome, Italy
来源：
2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A semi-empirical tight-binding Hamiltonian based on density functional theory is used to study scattering of defects in H-passivated (110)SiNWs. The effect of surface dangling bonds and the presence of oxygen on the coherent transport is considered. The scattering at Si vacancies is also studied.
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页码：9 / 12
页数：4
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