Photoluminescence study of deep etched InGaAs/GaAs quantum wires and dots defined by low-voltage electron beam lithography

被引:34
|
作者
Steffen, R
Koch, T
Oshinowo, J
Faller, F
Forchel, A
机构
[1] Technische Physik, Universität Würzburg, 97074 Würzburg, Am Hubland
关键词
D O I
10.1063/1.116467
中图分类号
O59 [应用物理学];
学科分类号
摘要
Combining low-voltage electron beam lithography (EEL) and wet chemical etching, arrays of deep etched InGaAs/GaAs quantum wires with widths down to 15 nm and dots with minimum diameters of 27 nm have been fabricated. The application of low-voltage EEL strongly reduces the proximity effect during pattern exposure and allows the formation of very homogeneous nanostructure arrays. Low-excitation photoluminescence (PL) spectroscopy of both wires and dots reveals a structure size dependent blue shift of the emission lines up to 14 meV. This energy shift is caused by lateral confinement and shows a clear dependence on the structure dimensionality. The quantization is calculated with a simple model using only standard InGaAs/GaAs material parameters and the geometrical structure widths measured with a scanning electron microscope (SEM). (C) 1996 American Institute of Physics.
引用
收藏
页码:223 / 225
页数:3
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