Deep trap measurement in Hg1-xCdxTe by isothermal capacitance and deep-level transient spectroscopy

被引：1
|
作者：
Sato, K [1 ]
Suno, K [1 ]
Wada, H [1 ]
Okamoto, Y [1 ]
Morimoto, J [1 ]
Miyakawa, T [1 ]
机构：
[1] JAPAN DEF AGCY,RES CTR 2,TECH RES & DEV INST,SETAGAYA KU,TOKYO 154,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 6A期
关键词：
HgCdTe; MCT; ICTS; DLTS; deep level; narrow gap semiconductor; activation energy; capture cross section;
D O I：
10.1143/JJAP.35.3374
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Deep-level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS) were applied to characterize deep levels in Hg1-xCdxTe (x = 0.22). Compared with DLTS, ICTS gave mere reliable results. We found a deep trap with density, activation energy and capture cross section of 1.9 x 10(13) cm(-3), 29 meV and 1.4 x 10(-17) cm(2), respectively.
引用
收藏
页码：3374 / 3375
页数：2
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