Limits of lateral expansion in two-dimensional materials with line defects

被引:3
|
作者
Koskinen, Pekka [1 ]
机构
[1] Univ Jyvaskyla, Nanosci Ctr, Dept Phys, Jyvaskyla 40014, Finland
来源
PHYSICAL REVIEW MATERIALS | 2021年 / 5卷 / 09期
关键词
ELECTRONIC-PROPERTIES; SUSPENDED GRAPHENE; MECHANICS;
D O I
10.1103/PhysRevMaterials.5.L091001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The flexibility of two-dimensional (2D) materials enables static and dynamic ripples that are known to cause lateral contraction, shrinking of the material boundary. However, the limits of 2D materials' lateral expansion are unknown. Therefore, here we discuss the limits of the intrinsic lateral expansion of 2D materials that are modified by compressive line defects. Using thin sheet elasticity theory and sequential multiscale modeling, we find that the lateral expansion is inevitably limited by the onset of rippling. The maximum lateral expansion chi(max) approximate to 2.1 t(2)sigma(d), governed by the elastic thickness t and the defect density sigma(d), remains typically well below 1%. In addition to providing insight to the limits of 2D materials' mechanical limits and applications, the results highlight the potential of line defects in strain engineering, since for graphene they suggest giant pseudomagnetic fields that can exceed 1000 T.
引用
收藏
页数:6
相关论文
共 50 条
  • [1] Rippling of two-dimensional materials by line defects
    Kahara, Topi
    Koskinen, Pekka
    PHYSICAL REVIEW B, 2020, 102 (07)
  • [2] Spectroscopic investigation of defects in two-dimensional materials
    Wu, Zhangting
    Ni, Zhenhua
    NANOPHOTONICS, 2017, 6 (06) : 1219 - 1237
  • [3] Limits to the Optical Response of Graphene and Two-Dimensional Materials
    Miller, Owen D.
    Ilic, Ognjen
    Christensen, Thomas
    Reid, M. T. Homer
    Atwater, Harry A.
    Joannopoulos, John D.
    Soljacic, Mann
    Johnson, Steven G.
    NANO LETTERS, 2017, 17 (09) : 5408 - 5415
  • [4] Valleytronics in two-dimensional materials with line defect
    Tian, Hongyu
    Ren, Chongdan
    Wang, Sake
    NANOTECHNOLOGY, 2022, 33 (21)
  • [5] Nanoscale Integration of Two-Dimensional Materials by Lateral Heteroepitaxy
    Sutter, Peter
    Huang, Yuan
    Sutter, Eli
    NANO LETTERS, 2014, 14 (08) : 4846 - 4851
  • [6] Stacking of Two-Dimensional Materials in Lateral and Vertical Directions
    Lim, Hyunseob
    Yoon, Seong In
    Kim, Gwangwoo
    Jang, A-Rang
    Shin, Hyeon Suk
    CHEMISTRY OF MATERIALS, 2014, 26 (17) : 4891 - 4903
  • [7] Substrate effects on charged defects in two-dimensional materials
    Wang, Dan
    Sundararaman, Ravishankar
    PHYSICAL REVIEW MATERIALS, 2019, 3 (08)
  • [8] Geometry and mechanics of two-dimensional defects in amorphous materials
    Moshe, Michael
    Levin, Ido
    Aharoni, Hillel
    Kupferman, Raz
    Sharon, Eran
    PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2015, 112 (35) : 10873 - 10878
  • [9] Computational design of quantum defects in two-dimensional materials
    Yuan Ping
    Tyler J. Smart
    Nature Computational Science, 2021, 1 : 646 - 654
  • [10] Computational design of quantum defects in two-dimensional materials
    Ping, Yuan
    Smart, Tyler J.
    NATURE COMPUTATIONAL SCIENCE, 2021, 1 (10): : 646 - 654