Structural properties of GaN1-xPx films

被引：9

作者：

Chen, DJ ^{[1
]}

Shen, B ^{[1
]}

Zhang, KX ^{[1
]}

Deng, YZ ^{[1
]}

Fan, J ^{[1
]}

Zhang, R ^{[1
]}

Shi, Y ^{[1
]}

Zheng, YD ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

ACTA PHYSICA SINICA | 2003年 / 52卷 / 07期

关键词：

GaN1-xPx; metal-organic chemical vapor deposition; x-ray diffraction; Raman spectra;

D O I：

10.7498/aps.52.1788

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

X-ray diffraction (XRD) and Raman spectra for a series of high-phosphorus-content GaN1-xPx films, with phosphorus content up to 15%, grown by means of light-radiation heating, low-pressure metal-organic chemical vapor deposition have been investigated. XRD results show that (0002) peaks of GaN1-xPx. samples have shifted to smaller angles compared with that of undoped GaN sample. The Raman spectra of GaN, P. films exhibit four new vibrational modes compared with undoped GaN sample. These modes are assigned to gap modes related to the Ga-P bond vibrations, local vibrational mode related to the phosphorus clusters, and disorder-activated scattering, respectively. The frequency of the A(1) (LO) mode is found to decrease with increasing x. This redshift is attributed to the effects of alloying and strain.

引用

页码：1788 / 1791

页数：4

共 13 条

[1] Gas source molecular beam epitaxial growth of GaN1-xPx (x<=0.015) using ion-removed electron cyclotron resonance radical cell
Iwata, K
Asahi, H
Asami, K
Gonda, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (12B): : L1634 - L1637
[2] Gas source MBE growth of GaN rich side of GaN1-xPx using ion-removed ECR radical cell
Iwata, K
Asahi, H
Asami, K
Gonda, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 150 - 155
[3] Impurity-induced modes of Mg, As, Si, and C in hexagonal and cubic GaN
Kaczmarczyk, G
Kaschner, A
Hoffmann, A
Thomsen, C
[J]. PHYSICAL REVIEW B, 2000, 61 (08): : 5353 - 5357
[4] Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy
Kaschner, A
Siegle, H
Kaczmarczyk, G
Strassburg, M
Hoffmann, A
Thomsen, C
Birkle, U
Einfeldt, S
Hommel, D
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (22) : 3281 - 3283
[5] Hexagonal GaN1-xPx growth by laser-assisted metalorganic chemical vapor deposition
Kikawa, J
Yoshida, S
Itoh, Y
[J]. JOURNAL OF CRYSTAL GROWTH, 2001, 229 (01) : 48 - 52
[6] Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy
Kuroiwa, R
Asahi, H
Asami, K
Kim, SJ
Iwata, K
Gonda, S
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (18) : 2630 - 2632
[7] Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy
Kuroiwa, R
Asahi, H
Iwata, K
Kim, SJ
Noh, JH
Asami, K
Gonda, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6B): : 3810 - 3813
[8] Optical spectroscopy study on carrier concentration and mobility in GaN
Li, ZF
Lu, W
Ye, HJ
Yuan, XZ
Shen, XC
Li, G
Chua, SJ
[J]. ACTA PHYSICA SINICA, 2000, 49 (08) : 1614 - 1619
[9] Raman scattering in ion-implanted GaN
Limmer, W
Ritter, W
Sauer, R
Mensching, B
Liu, C
Rauschenbach, B
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (20) : 2589 - 2591
[10] Microstructures of GaN1-xPx layers grown on (0001)GaN substrates by gas source molecular beam epitaxy
Seong, TY
Bae, IT
Choi, CJ
Noh, DY
Zhao, Y
Tu, CW
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3192 - 3197

← 1 2 →