Evaluation of Grain-Boundary Conduction of Dense AlN-SiC Solid Solution by Scanning Nonlinear Dielectric Microscopy

被引：17

作者：

Kobayashi, Ryota ^{[1
]}

Tatami, Junichi ^{[1
]}

Wakihara, Toru ^{[1
]}

Komeya, Katsutoshi ^{[1
]}

Meguro, Takeshi ^{[1
]}

Tu, Rong ^{[2
]}

Goto, Takashi ^{[2
]}

机构：

[1] Yokohama Natl Univ, Grad Sch Environm & Informat Sci, Yokohama, Kanagawa 2408501, Japan

[2] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2010年 / 93卷 / 12期

关键词：

ALUMINUM NITRIDE; FABRICATION; CERAMICS;

D O I：

10.1111/j.1551-2916.2010.04230.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dense and elemental homogeneous 2H AlN-SiC solid solution doped with Al and C was fabricated by using spark plasma sintering. The p-type electrical conduction of the sample was confirmed by measurements of electrical conductivities and Seebeck coefficient. Dopant profiling of the sample by scanning nonlinear dielectric microscopy showed that the AlN-SiC grains respond to p-type electrical conduction. These results indicated that added Al and C were dissolved to the grains and acted as p-type dopants. In contrast, the grain boundaries did not show any response, suggesting the presence of depletion layer in the boundary.

引用

页码：4026 / 4029

页数：4

共 5 条

[1] Fabrication and evaluation of AlN-SiC solid solutions with p-type electrical conduction
Kobayashi, Ryota
Tatami, Junichi
Wakihara, Toru
Komeya, Katsutoshi
Meguro, Takeshi
Tu, Rong
Goto, Takashi
SIAIONS AND NON-OXIDES, 2009, 403 : 39 - +
[2] The Possibility of Dense Materials Based on Obtaining an AlN-SiC Solid Solution by Self-Propagating High-Temperature Synthesis Gasostating
Akopdzhanyan, T. G.
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RUSSIAN JOURNAL OF NON-FERROUS METALS, 2020, 61 (06) : 686 - 690
[3] Reaction hot-pressed sintering of grain-refined TiB2-TiC composites by AlN-SiC solid solution
Wang, X. Y.
Xia, L.
Song, L.
Liu, Q. T.
Wen, G.
ADVANCED MATERIALS AND PROCESS TECHNOLOGY, PTS 1-3, 2012, 217-219 : 343 - +
[4] EVALUATION OF THE MICROSTRUCTURE OF BETA-SIAION SOLID-SOLUTION MATERIALS CONTAINING DIFFERENT AMOUNTS OF AMORPHOUS GRAIN-BOUNDARY PHASE
GREIL, P
WEISS, J
JOURNAL OF MATERIALS SCIENCE, 1982, 17 (06) : 1571 - 1578
[5] Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy
Chinone, Norimichi
Nayak, Alpana
Kosugi, Ryoji
Tanaka, Yasunori
Harada, Shinsuke
Okumura, Hajime
Cho, Yasuo
APPLIED PHYSICS LETTERS, 2017, 111 (06)

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