Low resistivity Ga-doped ZnO thin films of less than 100 nm thickness prepared by ion plating with direct current arc discharge

被引：81

作者：

Yamada, Takahiro ^{[1
]}

Miyake, Aki ^{[1
]}

Kishimoto, Seiichi ^{[1
]}

Makino, Hisao ^{[1
]}

Yamamoto, Naoki ^{[1
]}

Yamamoto, Tetsuya ^{[1
]}

机构：

[1] Kochi Univ Technol, Kochi 7288502, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 05期

基金：

日本科学技术振兴机构;

关键词：

D O I：

10.1063/1.2767213

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low resistivity Ga-doped ZnO films were prepared on a glass substrate by ion plating with direct current arc discharge. Thickness dependent changes in the electrical properties of the films are reported, focusing on the thin films of less than 100 nm thickness. Structural analyses showed that the thinnest film of 30 nm thickness consists of well-oriented columnar grains normal to the substrate, and the resistivity was as low as 4.4x10(-4) Omega cm. The changes in lattice strain and c-axis fluctuation with the growth of grains are also shown to be associated with the electrical properties. (c) 2007 American Institute of Physics.

引用

页数：3

共 26 条

[1] Effect of thermal annealing on electrical properties of transparent conductive Ga-doped ZnO films prepared by ion-plating using direct-current arc discharge
Yamada, Takahiro
Miyake, Aki
Makino, Hisao
Yamamoto, Naoki
Yamamoto, Tetsuya
THIN SOLID FILMS, 2009, 517 (10) : 3134 - 3137
[2] Temperature dependence of electrical properties of Ga-doped ZnO films deposited by ion plating with DC arc discharge
Terasako, T.
Song, H.
Makino, H.
Shirakata, S.
Yamamoto, T.
THIN SOLID FILMS, 2013, 528 : 19 - 25
[3] Effects of oxygen gas flow rates and Ga contents on structural properties of Ga-doped ZnO films prepared by ion-plating with a DC arc discharge
Terasako, Tomoaki
Nomoto, Junichi
Makino, Hisao
Yamamoto, Naoki
Shitakata, Sho
Yamamoto, Tetsuya
THIN SOLID FILMS, 2015, 596 : 24 - 28
[4] Characterization of low resistivity Ga-doped ZnO thin films on Si substrates prepared by pulsed laser deposition
Mo, Guankong
Liu, Jiahui
Lin, Guotao
Zou, Zhuoliang
Wei, Zeqi
Liu, Yulun
He, Huan
Fu, Yuechun
Shen, Xiaoming
MATERIALS RESEARCH EXPRESS, 2019, 6 (10):
[5] Highly moisture resistant Ga-doped ZnO films with textured surface for thin-film solar cells with indium codoping fabricated by ion plating with direct-current arc discharge
Song, Huaping
Nomoto, Junichi
Makino, Hisao
Yamamoto, Tetsuya
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
[6] Highly moisture resistant Ga-doped ZnO films with textured surface for thin-film solar cells with indium codoping fabricated by ion plating with direct-current arc discharge
Song, Huaping
Nomoto, Junichi
Makino, Hisao
Yamamoto, Tetsuya
Japanese Journal of Applied Physics, 2014, 53 (5 SPEC. ISSUE 1)
[7] Limiting factors of carrier concentration and transport of polycrystalline Ga-doped ZnO films deposited by ion plating with dc arc discharge
Nomoto, Junichi
Makino, Hisao
Yamamoto, Tetsuya
THIN SOLID FILMS, 2016, 601 : 13 - 17
[8] Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature
Ke, Zhu
Ye, Yang
Jia, Li
Weijie, Song
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2017, 32 (01): : 85 - 88
[9] Physical Properties of Al-doped ZnO and Ga-doped ZnO Thin Films Prepared by Direct Current Sputtering at Room Temperature
朱科
YANG Ye
LI Jia
SONG Weijie
JournalofWuhanUniversityofTechnology(MaterialsScience), 2017, 32 (01) : 85 - 88
[10] Physical properties of Al-doped ZnO and Ga-doped ZnO thin films prepared by direct current sputtering at room temperature
Ke Zhu
Ye Yang
Jia Li
Weijie Song
Journal of Wuhan University of Technology-Mater. Sci. Ed., 2017, 32 : 85 - 88

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