Thermal Transport Mechanism of Amorphous HfO2: A Molecular Dynamics Based Study

被引:9
|
作者
Zhang Honggang [1 ]
Wei Han [1 ]
Bao Hua [1 ]
机构
[1] Shanghai Jiao Tong Univ, Univ Michigan Shanghai Jiao Tong Univ Joint Inst, Shanghai 200240, Peoples R China
基金
中国国家自然科学基金;
关键词
amorphous HfO2; molecular dynamics; thermal conductivity; mean free path; size effect; temperature effect; ATOMIC LAYER DEPOSITION; CONDUCTIVITY; TRANSISTORS;
D O I
10.1007/s11630-022-1626-5
中图分类号
O414.1 [热力学];
学科分类号
摘要
Amorphous hafnium dioxide (a-HfO2) has attracted increasing interest in the application of semiconductor devices due to its high dielectric constant. However, the thermal transport properties of a-HfO2 are not well understood, which hinders its potential application in electronics. In this work, we systematically investigate the thermal transport property of a-HfO2 using the molecular dynamics method. The non-equilibrium molecular dynamics simulations reveal that the thermal conductivity of a-HfO2 is length-dependent below 100 nm. Spectrally decomposed heat current further proves that the thermal transport of propagons and diffusons is sensitive to the system length. The thermal conductivity is found to increase with temperature using Green-Kubo mode analysis. We also quantify the contribution of each carrier to the thermal conductivity at different temperatures. We find that propagons are more important than diffusons in thermal transport at low temperatures (<100 K). In comparison, diffusons dominate heat transport at high temperatures. Locons have negligible contribution to the total thermal conductivity.
引用
收藏
页码:1052 / 1060
页数:9
相关论文
共 50 条
  • [1] Thermal Transport Mechanism of Amorphous HfO2: A Molecular Dynamics Based Study
    Honggang Zhang
    Han Wei
    Hua Bao
    Journal of Thermal Science, 2022, 31 : 1052 - 1060
  • [2] Thermal Transport Mechanism of Amorphous HfO2: A Molecular Dynamics Based Study
    ZHANG Honggang
    WEI Han
    BAO Hua
    JournalofThermalScience, 2022, 31 (04) : 1052 - 1060
  • [3] Molecular dynamics simulation of amorphous HfO2 for resistive RAM applications
    Broglia, G.
    Ori, G.
    Larcher, L.
    Montorsi, M.
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2014, 22 (06)
  • [4] Charge transport mechanism in La:HfO2
    Gritsenko, V. A.
    Gismatulin, A. A.
    APPLIED PHYSICS LETTERS, 2020, 117 (14)
  • [5] Molecular dynamics simulation of structural properties in amorphous HfO2 under cooling process
    Nguyen, Thoan H.
    Le, Vinh V.
    Nguyen, Trung N.
    VACUUM, 2019, 161 : 251 - 258
  • [6] Charge transport in HfO2 due to multiphonon traps ionization mechanism in SiO2/HfO2 stacks
    Novikov, Yu N.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (02)
  • [7] Charge transport in HfO2 due to multiphonon traps ionization mechanism in SiO2/HfO2 stacks
    Novikov, Yu.N. (nov@isp.nsc.ru), 1600, American Institute of Physics Inc. (113):
  • [8] Diffusion of oxygen in amorphous HfO2
    Motozu, Yuna
    Nakamura, Ryusuke
    Hoshishima, Sota
    Suzuki, Takeyuki
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2025, 199
  • [9] Neural network enabled molecular dynamics study of HfO2 phase transitions
    Bichelmaier, Sebastian
    Carrete, Jesus
    Madsen, Georg K. H.
    PHYSICAL REVIEW B, 2024, 110 (17)
  • [10] Bipolar conductivity in amorphous HfO2
    Islamov, D. R.
    Gritsenko, V. A.
    Cheng, C. H.
    Chin, A.
    APPLIED PHYSICS LETTERS, 2011, 99 (07)