Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

被引：4
|
作者：
Duong Anh Tuan [1 ]
Dang Duc Dung [1 ,2 ]
Vo Thanh Son [3 ,4 ]
Shin, Yooleemi [1 ]
Cho, Sunglae [1 ]
机构：
[1] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea
[2] Ha Noi Univ Sci & Technol, Dept Gen Phys, Sch Engn Phys, Hanoi, Vietnam
[3] Chungnam Natl Univ, Ctr Nanobioenineering, Taejon 350746, South Korea
[4] Chungnam Natl Univ, Ctr Spintron, Taejon 350746, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 07期
基金：
新加坡国家研究基金会;
关键词：
ALLOYS; MAGNETOSTRICTION;
D O I：
10.1063/1.3677873
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial Fe-Ga thin films in disordered bcc alpha-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M-S) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3% at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3677873]
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页数：3
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