Formation of locally aluminum-doped p-type silicon regions by in-line high-rate evaporation

Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28 mu m thickness at dynamic deposition rates of 20 mu mxm/min on locally laser-ablated Al(2)O(3)/SiN(x) passivation layers. Due to the high substrate temperature of up to 778 degrees C during deposition an Al-doped p(+) region is formed. Using the camera-based dynamic infrared lifetime mapping technique we determine a contact recombination velocity of 1000 +/- 100 cm/s for local Al-p(+) regions on p-type silicon wafers of 1.5 Omega cm resistivity. The recombination velocity between the contacts is determined to 4.4 +/- 0.5 cm/s after deposition. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of SiliconPV 2011.