Diffusion barrier property of sputtered molybdenum nitride films for DRAM copper metallization

被引:0
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作者
Park, JW [1 ]
Lee, JY [1 ]
机构
[1] HANYANG UNIV,DEPT ENGN MET,SEOUL 133791,SOUTH KOREA
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TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
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页码:687 / 692
页数:6
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