Radiative recombination in InP quantum dots on GaP

被引：0
|
作者：
Hatami, F [1 ]
Masselink, WT [1 ]
Schrottke, L [1 ]
机构：
[1] Humboldt Univ, Dept Phys, D-10115 Berlin, Germany
来源：
ICM 2000: PROCEEDINGS OF THE 12TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS | 2000年
关键词：
D O I：
10.1109/ICM.2000.916429
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe the growth and optical emission from strained InP quantum dots grown on GaP using gas-source molecular beam epitaxy. Self-organized island formation takes place for InP coverage greater than 1.8 monolayers on the (100) GaP surface. Intense photoluminescence from the dots are observed at about 2.0 eV.
引用
收藏
页码：129 / 131
页数：3
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